WST8205 Dual N-Channel 20V 5.8A SOT-23-6L WINSOK MOSFET


WST8205 Dual N-Channel 20V 5.8A SOT-23-6L WINSOK MOSFET

short description:

  • Model Number: WST8205
  • BVDSS: 20V
  • RDSON: 24mΩ
  • ID: 5.8A
  • Channel: Dual N-Channel
  • Package: SOT-23-6L
  • Product Summery: The WST8205 MOSFET operates at 20 volts, sustains 5.8 amps of current, and has a resistance of 24 milliohms. The MOSFET consists of a Dual N-Channel and is packaged in SOT-23-6L.
  • Applications: Automotive electronics, LED lights, audio, digital products, small household appliances, consumer electronics, protective boards.
  • Product Detail


    Product Tags

    General Description

    The WST8205 is a high performance trench N-Ch MOSFET with extremely high cell density, providing excellent RDSON and gate charge for most small power switching and load switching applications. The WST8205 meets RoHS and Green Product requirements with full functional reliability approval.


    Our advanced technology incorporates innovative features that set this device apart from others in the market. With high cell density trenches, this technology enables greater integration of components, leading to enhanced performance and efficiency.One notable advantage of this device is its extremely low gate charge. As a result, it requires minimal energy to switch between its on and off states, resulting in reduced power consumption and improved overall efficiency. This low gate charge characteristic makes it an ideal choice for applications that demand high-speed switching and precise control.Additionally, our device excels in reducing Cdv/dt effects. Cdv/dt, or the rate of change of drain-to-source voltage over time, can cause undesirable effects such as voltage spikes and electromagnetic interference. By effectively minimizing these effects, our device ensures reliable and stable operation, even in demanding and dynamic environments.Apart from its technical prowess, this device is also environmentally friendly. It is designed with sustainability in mind, taking into consideration factors such as power efficiency and longevity. By operating with utmost energy efficiency, this device minimizes its carbon footprint and contributes to a greener future.In summary, our device combines advanced technology with high cell density trenches, extremely low gate charge, and excellent reduction of Cdv/dt effects. With its environmentally friendly design, it not only delivers superior performance and efficiency but also aligns with the growing need for sustainable solutions in today's world.


    High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System,Automotive electronics, LED lights, audio, digital products, small household appliances, consumer electronics, protective boards.

    corresponding material number

    AOS AO6804A,NXP PMDT290UNE,PANJIT PJS6816,Sinopower SM2630DSC,dintek DTS5440,DTS8205,DTS5440,DTS8205,RU8205C6.

    Important parameters

    Symbol Parameter Rating Units
    VDS Drain-Source Voltage 20 V
    VGS Gate-Source Voltage ±12 V
    ID@Tc=25℃ Continuous Drain Current, VGS @ 4.5V1 5.8 A
    ID@Tc=70℃ Continuous Drain Current, VGS @ 4.5V1 3.8 A
    IDM Pulsed Drain Current2 16 A
    PD@TA=25℃ Total Power Dissipation3 2.1 W
    TSTG Storage Temperature Range -55 to 150
    TJ Operating Junction Temperature Range -55 to 150
    Symbol Parameter Conditions Min. Typ. Max. Unit
    BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.022 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=5.5A --- 24 28
        VGS=2.5V , ID=3.5A --- 30 45  
    VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.7 1.2 V
    △VGS(th) VGS(th) Temperature Coefficient   --- -2.33 --- mV/℃
    IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA
        VDS=16V , VGS=0V , TJ=55℃ --- --- 5  
    IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA
    gfs Forward Transconductance VDS=5V , ID=5A --- 25 --- S
    Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω
    Qg Total Gate Charge (4.5V) VDS=10V , VGS=4.5V , ID=5.5A --- 8.3 11.9 nC
    Qgs Gate-Source Charge --- 1.4 2.0
    Qgd Gate-Drain Charge --- 2.2 3.2
    Td(on) Turn-On Delay Time VDD=10V , VGEN=4.5V , RG=6Ω

    ID=5A, RL=10Ω

    --- 5.7 11.6 ns
    Tr Rise Time --- 34 63
    Td(off) Turn-Off Delay Time --- 22 46
    Tf Fall Time --- 9.0 18.4
    Ciss Input Capacitance VDS=10V , VGS=0V , f=1MHz --- 625 889 pF
    Coss Output Capacitance --- 69 98
    Crss Reverse Transfer Capacitance --- 61 88

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