WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET


WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

short description:

  • Model Number: WSD2090DN56
  • BVDSS: 20V
  • RDSON: 2.8mΩ
  • ID: 80A
  • Channel: N-channel
  • Package: DFN5*6-8
  • Product Summery: The voltage of WSD2090DN56 MOSFET is 20V, the current is 80A, the resistance is 2.8mΩ, the channel is N-channel, and the package is DFN5*6-8.
  • Applications: Electronic cigarettes, drones, electrical tools, fascia guns, PD, small household appliances, etc.
  • Product Detail


    Product Tags

    General Description

    The WSD2090DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.


    Advanced high cell density Trench technology, Super Low Gate Charge ,Excellent CdV / dt effect decline ,100% EAS Guaranteed, Green Device Available


    Switch, Power System, Load Switch, electronic cigarettes, drones, electrical tools, fascia guns, PD, small household appliances, etc.

    corresponding material number

    AOS AON6572

    Important parameters

    Absolute Maximum Ratings (TC=25℃unless otherwise noted)

    Symbol Parameter Max. Units
    VDSS Drain-Source Voltage 20 V
    VGSS Gate-Source Voltage ±12 V
    ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 80 A
    ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 59 A
    IDM Pulsed Drain Current note1 360 A
    EAS Single Pulsed Avalanche Energy note2 110 mJ
    PD Power Dissipation 81 W
    RθJA Thermal Resistance, Junction to Case 65 ℃/W
    RθJC Thermal Resistance Junction-Case 1 4 ℃/W
    TJ, TSTG Operating and Storage Temperature Range -55 to +175

    Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

    Symbol Parameter Conditions Min Typ Max Units
    BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 24 --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.018 --- V/℃
    VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 0.50 0.65 1.0 V
    RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=30A --- 2.8 4.0 mΩ
    RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=20A --- 4.0 6.0
    IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V --- --- 1 μA
    IGSS Gate-Body Leakage Current VGS=±10V, VDS=0V --- --- ±100 nA
    Ciss Input Capacitance VDS=10V,VGS=0V,f=1MHZ --- 3200 --- pF
    Coss Output Capacitance --- 460 ---
    Crss Reverse Transfer Capacitance --- 446 ---
    Qg Total Gate Charge VGS=4.5V,VDS=10V,ID=30A --- 11.05 --- nC
    Qgs Gate-Source Charge --- 1.73 ---
    Qgd Gate-Drain Charge --- 3.1 ---
    tD(on) Turn-on Delay Time VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω --- 9.7 --- ns
    tr Turn-on Rise Time --- 37 ---
    tD(off) Turn-off Delay Time --- 63 ---
    tf Turn-off fall Time --- 52 ---
    VSD Diode Forward Voltage IS=7.6A,VGS=0V --- --- 1.2 V

  • Previous:
  • Next:

  • Write your message here and send it to us