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Difference Between Unipolar SPWM & Bipolar SPWM
1. Basic Definition SPWM (Sinusoidal Pulse Width Modulation) is widely used for BLDC sine drive, single-phase / three-phase inverters, UPS and power converters. According to the level of output voltage during switching, it is divided into unipolar SPWM and bipolar SPWM. 2. Core Working Principle ...Read more -
Operating Frequency Range of SiC MOSFET
1. Core Overview In theory, SiC MOSFET supports switching frequency up to 1 MHz or higher. However, the practical operating frequency is restricted by topology, power level, heat dissipation and EMI conditions. We need to distinguish theoretical capability and mass-production mature frequency ran...Read more -
Advantages of Silicon Carbide (SiC) Power Devices
1. Overview Silicon Carbide (SiC) belongs to wide bandgap semiconductor materials. Compared with traditional silicon power devices (Si MOSFET, IGBT), SiC power devices have inherent physical advantages, making them the preferred solution for high-voltage, high-frequency, high-efficiency power con...Read more -
Silicon Carbide (SiC) vs Silicon MOSFET: Advantages & Disadvantages
1. Introduction Traditional power switches adopt silicon-based MOSFET. In recent years, SiC MOSFET has been widely used in high-voltage, high-frequency scenarios such as EV chargers, energy storage, solar inverters and high-power BLDC controllers. Many designers are confused about how to sel...Read more -
What Is the Function of MOSFET in Antenna Circuits?
1. Overview MOSFETs are core control components inside antenna RF front-end circuits, widely used in mobile phones, BLDC remote control, WiFi, Bluetooth, RFID, 5G base station and wireless sensor equipment. They are mainly divided into RF small-signal MOS (for signal switching/tuning) and po...Read more -
How to Improve Heat Dissipation for SMD‑MOSFETs?
1. Introduction Excessive temperature is the main cause of early‑failure for surface‑mount MOSFETs used in BLDC motor drivers and DC‑DC power circuits. SMD packages such as DPAK, IPAK, SO‑8 have limited chip‑to‑ambient heat dissipation area. Proper thermal‑design can reduce junction temperatur...Read more -
Why the Absolute‑Value of PMOS Threshold‑Voltage Is Normally Larger Than NMOS？
1. Clarify a crucial concept For enhancement‑mode power‑MOSFET: NMOS threshold voltage VGS(th) is positive, typical range:0.7V‑1.0V. PMOS threshold voltage VGS(th) is negative, normally ‑0.9V ~ ‑1.3V. We compare absolute value here. PMOS does not have a bigger numerical reading, but a la...Read more -
Why the Absolute‑Value of PMOS Threshold Voltage Is Generally Larger Than NMOS
1. Clarify a key point first For enhancement‑mode devices: NMOS threshold voltage VGS(th) is positive, normally 0.7V‑1.0 V. PMOS threshold voltage VGS(th) is negative, roughly ‑0.9V ~‑1.3 V. We actually compare absolute values. The magnitude of PMOS threshold voltage is bigger, instead o...Read more -
Conduction Conditions of NMOS Transistors
1. Introduction NMOS transistors are divided into two types: enhancement-mode and depletion-mode. Their turn-on logic is completely different. Many engineers encounter abnormal heating, failure to turn on, and circuit leakage due to misunderstanding NMOS conduction conditions. This article use...Read more -
How to Evaluate MOSFET Performance Parameters During Component Selection?
1. Preface MOSFET selection directly affects circuit efficiency, heat generation, service life and stability. Many engineers only focus on voltage and current ratings while ignoring key performance indicators, which easily leads to excessive loss, overheating or device breakdown. ...Read more -
How to Judge MOSFET Working State According to Its Parameters
1. Introduction Many engineers only refer to MOSFET datasheet parameters for device selection, but do not know how to use real-time electrical parameters to judge the actual working state of the MOSFET in the circuit. Correct state judgment helps troubleshoot heating, abnormal switching, breakdow...Read more -
How to Read & Describe MOSFET Specification Parameters
1. Core Voltage Ratings (Absolute Maximum Ratings) 1.1 VDS – Drain-Source Voltage The maximum allowable voltage between drain and source under normal operation. Exceeding this value will cause avalanche breakdown and permanent damage to the MOSFET. Example marking: VDS = 60V, 100V, 200V, ...Read more
