WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

short description:

Model Number: WSM340N10G

BVDSS: 100V

RDSON: 1.6mΩ

ID: 340A

Channel: N-channel

Package: TOLL-8L

Product Summery: The voltage of WSM340N10G MOSFET is 100V, the current is 340A, the resistance is 1.6mΩ, the channel is N-channel, and the package is TOLL-8L.

Applications: Medical equipment, drones, PD power supplies, LED power supplies, industrial equipment, etc.

Send email to us PDF

Product Detail

Application

Product Tags

General Description

The WSM340N10G is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSM340N10G meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology , Super Low Gate Charge , Excellent CdV/dt effect decline , 100% EAS Guaranteed , Green Device Available.

Applications

Synchronous rectification , DC/DC Converter , Load switch , Medical equipment, drones, PD power supplies, LED power supplies, industrial equipment, etc.

Important parameters

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V	340	A
ID@TC=100℃	Continuous Drain Current, VGS @ 10V	230	A
IDM	Pulsed Drain Current..TC=25°C	1150	A
EAS	Avalanche Energy, Single pulse,L=0.5mH	1800	mJ
IAS	Avalanche Current, Single pulse,L=0.5mH	120	A
PD@TC=25℃	Total Power Dissipation	375	W
PD@TC=100℃	Total Power Dissipation	187	W
TSTG	Storage Temperature Range	-55 to 175	℃
TJ	Operating Junction Temperature Range	175	℃

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	100	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Total Gate Charge (10V)	VDS=50V , VGS=10V , ID=50A	---	260	---	nC
Qgs	Gate-Source Charge		---	80	---
Qgd	Gate-Drain Charge		---	60	---
Td(on)	Turn-On Delay Time	VDD=50V , VGS=10V ,RG=1Ω,RL=1Ω,IDS=1A.	---	88	---	ns
Tr	Rise Time		---	50	---
Td(off)	Turn-Off Delay Time		---	228	---
Tf	Fall Time		---	322	---
Ciss	Input Capacitance	VDS=40V , VGS=0V , f=1MHz	---	13900	---	pF
Coss	Output Capacitance		---	6160	---
Crss	Reverse Transfer Capacitance		---	220	---