WST2088A N-channel 20V 7.5A SOT-23-3L WINSOK MOSFET

short description:

Model Number: WST2088A

BVDSS: 20V

RDSON: 10.7mΩ

ID: 7.5A

Channel: N-channel

Package: SOT-23-3L

Product Summery: The voltage of WST2088A MOSFET is 20V, the current is 7.5A, the resistance is 10.7mΩ , the channel is N-channel, and the package is SOT-23-3L.

Applications: Electronic cigarettes, controllers, digital products, small household appliances, consumer electronics, etc.

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Product Detail

Application

Product Tags

General Description

The WST2088A is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2088A meet the RoHS and Green Product requirement with full function reliability approved.

Features

Advanced high cell density Trench technology , Super Low Gate Charge , Excellent Cdv/dt effect decline , Green Device Available

Applications

Power switching application , Hard Switched and High Frequency Circuits , Uninterruptible Power Supply , Electronic cigarettes, controllers, digital products, small household appliances, consumer electronics, etc.

corresponding material number

AO AO3416, ON NTR3C21NZ, VISHAY Si2312CDS, Nxperian PMV16XN, etc.

Important parameters

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	±12	V
ID@Tc=25℃	Continuous Drain Current, VGS @ 4.5V	7.5	A
ID@Tc=70℃	Continuous Drain Current, VGS @ 4.5V	4.5	A
IDP	Pulsed Drain Current	24	A
PD@TA=25℃	Total Power Dissipation	1.25	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=6A	---	10.7	14	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=2.5V , ID=5A	---	12.8	17
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.4	0.63	1.2	V
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V.	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
Qg	Total Gate Charge	VDS=15V , VGS=4.5V , ID=6A	---	10	---	nC
Qgs	Gate-Source Charge		---	1.6	---
Qgd	Gate-Drain Charge		---	3.4	---
Td(on)	Turn-On Delay Time	VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A	---	8	---	ns
Tr	Rise Time		---	15	---
Td(off)	Turn-Off Delay Time		---	33	---
Tf	Fall Time		---	13	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	590	---	pF
Coss	Output Capacitance		---	125	---
Crss	Reverse Transfer Capacitance		---	90	---