WST2088 N-channel 20V 8.8A SOT-23-3L WINSOK MOSFET


WST2088 N-channel 20V 8.8A SOT-23-3L WINSOK MOSFET

short description:

  • Model Number: WST2088
  • BVDSS: 20V
  • RDSON: 8mΩ
  • ID: 8.8A
  • Channel: N-channel
  • Package: SOT-23-3L
  • Product Summery: The voltage of WST2088 MOSFET is 20V, the current is 8.8A, the resistance is 8mΩ , the channel is N-channel, and the package is SOT-23-3L.
  • Applications: Electronic cigarettes, controllers, digital devices, small home appliances, and consumer electronics.
  • Product Detail


    Product Tags

    General Description

    The WST2088 MOSFETs are the most advanced N-channel transistors on the market. They have an incredibly high cell density, which results in excellent RDSON and gate charge. These MOSFETs are perfect for small power switching and load switch applications. They meet RoHS and Green Product requirements and have been fully tested for reliability.


    Advanced Trench technology with high cell density, Super Low Gate Charge, and excellent Cdv/dt effect decline, making it a Green Device.


    Power applications, circuits with hard switching and high frequency, uninterrupted power supplies, e-cigarettes, controllers, electronic devices, small home appliances, and consumer electronics.

    corresponding material number

    AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, etc.

    Important parameters

    Symbol Parameter Rating Units
    VDS Drain-Source Voltage 20 V
    VGS Gate-Source Voltage ±12 V
    ID@Tc=25℃ Continuous Drain Current, VGS @ 4.5V 8.8 A
    ID@Tc=70℃ Continuous Drain Current, VGS @ 4.5V 6.2 A
    IDP Pulsed Drain Current 40 A
    PD@TA=25℃ Total Power Dissipation 1.5 W
    TSTG Storage Temperature Range -55 to 150
    TJ Operating Junction Temperature Range -55 to 150

    Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

    Symbol Parameter Conditions Min. Typ. Max. Unit
    BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 --- --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃, ID=1mA --- 0.018 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A --- 8 13
     VGS=2.5V, ID=5A  ---  10  19
    VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 --- 1.3 V
    IDSS Drain-Source Leakage Current VDS=16V , VGS=0V. --- --- 10 uA
    IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA
    Qg Total Gate Charge VDS=15V , VGS=4.5V , ID=6A --- 16 --- nC
    Qgs Gate-Source Charge --- 3 ---
    Qgd Gate-Drain Charge --- 4.5 ---
    Td(on) Turn-On Delay Time VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A --- 10 --- ns
    Tr Rise Time --- 13 ---
    Td(off) Turn-Off Delay Time --- 28 ---
    Tf Fall Time --- 7 ---
    Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1400 --- pF
    Coss Output Capacitance --- 170 ---
    Crss Reverse Transfer Capacitance --- 135 ---

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